High-Performance InAlAs/InGaAs HEMTs and Their Application to a 40-GHz Monolithic Amplifier

We have achieved state-of-the-art low-noise performance by applying ultra-low-noise 0.15-pmgate InAlAslnGaAs HEMTs on InP passivated with silicon nitride to a 40-GHz monolithic amplifier. A FIEMT has shown a minimum noise figure of 0.55 dB at 26 GHz with an associated gain of 9.2 dB. The monolithic two-stage amplifier achieves a noise figure of 2.7 dB at 40 GHz wirh a gain of 10.6 dB. The noise figures range 2.4 -2.8 dB with a gain of 10.6 11.6 dB from 34 to 40 GHz.