Challenges, myths, and opportunities in hot carrier solar cells

Hot carrier solar cells hold the promise of efficiency significantly greater than that predicted by the Shockley–Queisser limit. Consequently, there has been considerable effort to create cells that achieve this goal, but so far, this has not been realized. There are many reasons for this. Here, the principles of the concept will be discussed along with some myths that hinder the future development of such devices. Also, a new approach to the hot carrier solar cell is described along with some recent experimental results that support such an approach.

[1]  Suman Datta,et al.  Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors , 1998 .

[2]  Influence of drift field on n-i-p solar cell performance , 1987 .

[3]  R. T. Ross,et al.  Efficiency of hot-carrier solar energy converters , 1982 .

[4]  D. Look,et al.  Monte Carlo simulation of bulk hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x , 1995 .

[5]  M. Saraniti,et al.  Simulation of Ultrasubmicrometer-Gate $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As/In}_{0.75}\hbox{Ga}_{0.25}\hbox{As/In}_{0.52}\hbox{Al}_{0.48}\hbox{As/InP}$ Pseudomorphic HEMTs Using a Full-Band Monte Carlo Simulator , 2007, IEEE Transactions on Electron Devices.

[6]  Hiroyuki Sakaki,et al.  Quantum Wire Superlattices and Coupled Quantum Box Arrays: A Novel Method to Suppress Optical Phonon Scattering in Semiconductors , 1989 .

[7]  Satoshi Taniguchi,et al.  Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs , 2004 .

[8]  Uwe Rau,et al.  Reciprocity relation between photovoltaic quantum efficiency and electroluminescent emission of solar cells , 2007 .

[9]  C. E. Fritts On a new form of selenium cell, and some electrical discoveries made by its use , 1883, American Journal of Science.

[10]  V. R. Whiteside,et al.  The role of intervalley phonons in hot carrier transfer and extraction in type-II InAs/AlAsSb quantum-well solar cells , 2019, Semiconductor Science and Technology.

[11]  D. Edelstein,et al.  Picosecond relaxation of hot‐carrier distributions in GaAs/GaAsP strained‐layer superlattices , 1987 .

[12]  D. Ferry In search of a true hot carrier solar cell , 2019, Semiconductor Science and Technology.

[13]  G. Conibeer Get them while they’re hot , 2020 .

[14]  Thomas Kirchartz,et al.  Solar Energy Conversion and the Shockley-Queisser Model, a Guide for the Perplexed , 2019, 1903.11954.

[15]  I. Konovalov,et al.  Hot carrier solar cell with semi infinite energy filtering , 2015 .

[16]  S. Goodnick,et al.  Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems. , 1988, Physical review. B, Condensed matter.

[17]  David T. D. Childs,et al.  1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density , 2004 .

[18]  B. Ploss,et al.  Modeling of hot carrier solar cell with semi-infinite energy filtering , 2019, Solar Energy.

[19]  P. Klang,et al.  Intersubband optoelectronics in the InGaAs/GaAsSb material system , 2010 .

[20]  C. S. Fuller,et al.  A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power , 1954 .

[21]  Katherine Smith,et al.  Demonstration of a hot‐carrier photovoltaic cell , 2014 .

[22]  Thomas Kirchartz,et al.  Guide for the perplexed to the Shockley–Queisser model for solar cells , 2019, Nature Photonics.

[23]  Martin A. Green,et al.  Particle conservation in the hot‐carrier solar cell , 2005 .

[24]  D. Ferry,et al.  Exploiting intervalley scattering to harness hot carriers in III–V solar cells , 2020 .

[25]  I. Sellers,et al.  Phonon linewidths in InAs/AlSb superlattices derived from first-principles—application towards quantum well hot carrier solar cells , 2020, Semiconductor Science and Technology.

[26]  E. Tea,et al.  Minority electron mobilities in GaAs, In0.53Ga0.47As, and GaAS0.50Sb0.50 calculated within an ensemble Monte Carlo model , 2011 .

[27]  A. Nozik,et al.  Irreversibilities in the mechanism of photoelectrolysis , 1978, Nature.

[28]  L. Hirst,et al.  Fundamental losses in solar cells , 2009 .

[29]  D. Ferry,et al.  Large electric-field induced electron drift velocity observed in an InxGa1−xAs-based p–i–n semiconductor nanostructure at T=300 K , 2003 .

[30]  C. J. Hearn Inter-carrier energy exchange and the critical concentration of hot carriers in a semiconductor , 1965 .

[31]  Karl Hess,et al.  Energy exchange in single-particle electron-electron scattering , 1999 .

[32]  H. Queisser,et al.  Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells , 1961 .

[33]  S. Goodnick,et al.  Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells. , 1987, Physical review letters.

[34]  Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition , 2000 .

[35]  Analysis of Deviation of Threshold Voltage from Hole Accumulation Model at High Excitation , 2006 .