Predictable topography simulation of SiO2 etching by C5F8 gas combined with a plasma simulation, sheath model and chemical reaction model
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S. Takagi | S. Onoue | K. Iyanagi | Kazuhito Nishitani | T. Shinmura | H. Itoh | M. Kanoh | Y. Shioyama | T. Akiyama | D. Kishigami