InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
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D. Mocuta | A. Thean | N. Collaert | R. Rooyackers | P. Agopian | A. Alian | A. Vandooren | A. Verhulst | D. Lin | J. Martino | Y. Mols | D. Verreck | C. Bordallo