Word line driving method for reducing word line stress time of memory cell and word line driving circuit thereof

A word line driving method for reducing stress time of a memory cell word line and a circuit thereof are provided to reduce word line stress due to a boosting voltage by changing the word line to a boosting voltage level and an internal voltage level during word line enable period. A first power supply voltage driver(410) is driven with a boosting voltage level. A second power supply voltage driver(420) is driven with an internal power supply voltage level. A switching part(430) transfers an output of the first power supply voltage driver to a word line driver(440) in response to a first switching signal, and transfers an output of the second power supply voltage driver to the word line driver in response to a second switching signal. The word line driver drives a word line with an output voltage level transferred from the switching part in response to a word line driving signal.