InAs/GaAs quantum dot lasers with GaP strain‐compensation layers grown by molecular beam epitaxy

The strain‐compensation (SC) technique to reduce the accumulation of strain is a promising approach to increase the design flexibility as well as the performance of quantum dot (QD) lasers. Here we have studied the application of tensile‐strained ultra‐thin GaP layers into multiple stacked InAs/GaAs QD grown by MBE. XRD analysis shows the controllability of the average strain in multiple‐stacked QD active layer, revealing a reduction in accumulated strain. Fabricated QD laser diodes including thinner QD active layers realized by SC technology show a narrower vertical far‐field angle and an increased small signal modulation bandwidth without loss of gain.

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