The influence of AlN buffer layer thickness grown by pulsed atomic layer epitaxy on the properties of GaN epilayer

GaN epilayers were grown on the AlN buffer layer obtained by pulsed atomic-layer epitaxy (PALE). The influence of PALE-AlN buffer thickness on the quality of GaN epilayers were investigated by atomic force microscopy, high resolution X-Ray diffraction, and photoluminescence (PL) spectrum. The strain states of the GaN epilayers were studied by Raman spectrum. It was found that the thickness of PALE-AlN buffer layer is a key parameter that affects the quality of GaN epilayer, and a proper growth period of PALE-AlN buffer layer leads to excellent surface morphology, crystal quality and optical properties of the GaN epilayer.

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