Performance of 600-V n-channel IGBTs at low temperatures

The static and dynamic performance of 600-V, n-channel, vertical insulated-gate bipolar transistors (IGBTs) at temperatures as low as 77 K has been measured and analyzed. The IGBTs demonstrate a better performance in turn-off times and maximum gate controllable current, at the expense of a slightly higher forward drop. It is shown that inherent in the IGBT is a parasitic thyristor that must be suppressed to retain gate-control operation. At 300 K, the dynamic latching current or maximum gate controllable current of the n-IGBT was 3.3 A, but it was current limiting at 5.4 A at both 195 and 77 K. Hence, by simply lowering the operating temperature, one can achieve the desirable current-limiting feature rather than encounter the often destructive latching behavior.<<ETX>>

[1]  M.S. Adler,et al.  The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device , 1984, IEEE Transactions on Electron Devices.

[2]  S. Tewksbury,et al.  N-channel enhancement-mode MOSFET characteristics from 10 to 300 K , 1981, IEEE Transactions on Electron Devices.

[3]  M. Kurata,et al.  Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics , 1985, 1985 International Electron Devices Meeting.

[4]  B. J. Baliga,et al.  Modern Power Devices , 1987 .

[5]  A. Goodman,et al.  The COMFET—A new high conductance MOS-gated device , 1983, IEEE Electron Device Letters.

[6]  M.S. Adler,et al.  The insulated gate rectifier (IGR): A new power switching device , 1982, 1982 International Electron Devices Meeting.

[7]  B. Jayant Baliga,et al.  Temperature behavior of insulated gate transistor characteristics , 1985 .

[8]  M. Kurata,et al.  Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO , 1984, 1984 International Electron Devices Meeting.

[9]  A. Goodman,et al.  Improved COMFETs with fast switching speed and high-current capability , 1983, 1983 International Electron Devices Meeting.

[10]  M.S. Adler,et al.  25 amp, 500 volt insulated gate transistors , 1983, 1983 International Electron Devices Meeting.