论文信息 - Modelling coolMOS transistors in SPICE

Modelling coolMOS transistors in SPICE

The paper deals with the problem of investigating the temperature influence on the CoolMOS transistor characteristics. The Infineon Technologies electrothermal model attached to SPICE is analysed in detail. The model has been verified experimentally for SPP11N60C2, at different cooling conditions of the transistor. Some modifications of the model in addition to the changes of its parameter values are also proposed in the paper. The results of simulations and measurements are presented too.

Krzysztof Górecki | Janusz Zarębski

[1] D.L. Blackburn,et al. Thermal characterization of power transistors , 1976, IEEE Transactions on Electron Devices.

[2] B. J. Daniel,et al. Modeling of the CoolMOS/sup TM/ transistor. II. DC model and parameter extraction , 2002 .

[3] E. Dallago,et al. Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. I. Fundamentals and theory , 1998 .

[4] V. Székely,et al. A new evaluation method of thermal transient measurement results , 1997 .

[5] Muhammad H. Rashid,et al. Power Electronics: Circuits, Devices and Applications , 1993 .

[6] B. J. Daniel,et al. Modeling of the CoolMOS/sup TM/ transistor - Part I: Device physics , 2002 .