Prospects for silicon monolithic opto-electronics with polymer light emitting diode

Monolithic integration of optical interconnections on silicon (Si) integrated circuits (IC) would enable higher system performance. The present work explores whether light emitting diodes made from the polymer materials, poly (p-phenylene vinylene) (PPV) or poly (2-methoxy, 5-(2'-ethyl-hexoxy)-1,4-phenylene vinylene) (MEH-PPV), which emit at a wavelength at which Si photodiodes are sensitive, are process-compatible with a high speed Si IC process.<<ETX>>