A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55 µm band gain was observed, and maximum gain reached 25 dB at 1530 nm when the input power was below −40 dBm.

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