Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material

In this paper, dual metal-double gate tunnel field effect transistor (DMG-DGTFET) is discussed for mono & hetero dielectric gate material. The hetero dielectric that we have used at the gate is a combination of SiO$$_{\text{2 }}$$2 and HfO$$_{\text{2 }}$$2. The DMG technique is used to optimize the performance of DGTFET along with the mono/hetero dielectric gate material. The results obtained from the simulation are discussed using energy band diagram, tunneling barrier width and compared with hetero & mono dielectric gate. With the application of hetero dielectric to the DMG-DGTFET, the advantages of both the techniques combine and the results shows that higher $$I_{ON} /I_{OFF}$$ION/IOFF ratio $$(2\times 10^{9})$$(2×109) compared to the mono dielectric case $$(2.5\times 10^{8})$$(2.5×108). The average subthreshold slope also improves from 58 mV/decade in mono dielectric to 48 mV/decade in hetero dielectric DMG-DGTEFT. All the simulations are done in Synopsys TCAD for a channel length of 25 nm using the non-local tunneling model.

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