TEMPERATURE-DEPENDENT STUDY OF SPIN-DEPENDENT RECOMBINATION AT SILICON DANGLING BONDS

Electrical detection of magnetic resonance is used in a large temperature range (150–350 K) to analyze the spin‐dependent recombination properties of silicon dangling bonds at the Si‐SiO2 interface (created by high‐field electron injections) and of silicon dangling bond clusters in bulk silicon (created by electron irradiations). Quite different temperature spin‐dependent recombination behaviors are observed for these two kinds of silicon dangling bonds. These features are related to the respective behaviors of their nonradiative capture processes, which are independently determined by deep level transient spectroscopy. Moreover, we show that only the Pb0 center is observed at the Si‐SiO2 interface after high‐field electron injection. The Pb1 center is not observed by electrically detected magnetic resonance in this large temperature range.

[1]  D. Vuillaume,et al.  Positive charge and interface state creation at the Si‐SiO2 interface during low‐fluence and high‐field electron injections , 1993 .

[2]  P. Lenahan,et al.  Spin dependent recombination: a /sup 29/Si hyperfine study of radiation-induced P/sub b/ centers at the Si/SiO/sub 2/ interface , 1990 .

[3]  Patrick M. Lenahan,et al.  High resolution spin dependent recombination study of hot carrier damage in short channel MOSFETs: 29 Si hyperfine spectra , 1993 .

[4]  H. Overhof,et al.  Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode , 1993 .

[5]  Dominique Vuillaume,et al.  An improved theory of spin dependent recombination: application to the P b center at the Si-SiO 2 interface , 1993 .

[6]  Walter R. Buchwald,et al.  Electrically detected magnetic resonance in p-n junction diodes , 1990 .

[7]  D. Lepine,et al.  Spin-Dependent Recombination on Silicon Surface , 1972 .

[8]  D. Arnold,et al.  Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon , 1993 .

[9]  Patrick M. Lenahan,et al.  A spin dependent recombination study of radiation induced defects at and near the Si/SiO/sub 2/ interface , 1989 .

[10]  Didier Goguenheim,et al.  New insights on the electronic properties of the trivalent silicon defects at oxidized 〈100〉 silicon surfaces , 1990 .

[11]  N. M. Johnson,et al.  Energy‐resolved DLTS measurement of interface states in MIS structures , 1979 .

[12]  James H. Stathis,et al.  Microscopic mechanisms of interface state generation by electrical stress , 1993 .

[13]  W. L. Warren,et al.  Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes , 1991 .

[14]  J. Robertson,et al.  The spectroscopy of crystal defects: a compendium of defect nomenclature , 1990 .

[15]  James H. Stathis,et al.  Identification of an interface defect generated by hot electrons in SiO2 , 1992 .

[16]  Eduard A. Cartier,et al.  Impact ionization and positive charge formation in silicon dioxide films on silicon , 1992 .

[17]  I. Solomon,et al.  Spin-dependent recombination in a silicon p-n junction , 1976 .

[18]  E. Poindexter,et al.  MOS interface states: overview and physicochemical perspective , 1989 .

[19]  Michael Pepper,et al.  Spin‐dependent recombination in irradiated Si/SiO2 device structures , 1988 .

[20]  Rachid Bouchakour,et al.  Generation of Si–SiO2 interface states by high electric field stress from low (100 K) to high (450 K) temperatures , 1993 .

[21]  Bruce E. Deal,et al.  Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers , 1981 .

[22]  Patrick M. Lenahan,et al.  Direct observation of interfacial point defects generated by channel hot hole injection in n‐channel metal oxide silicon field effect transistors , 1991 .