Design, integration and characterization of PZT tunable FBAR

This work presents the elaboration and the characterization of PZT film bulk acoustic resonators. Resonators are elaborated by deep reactive ion etching of silicon. Resonators present quite small electromechanical characteristics (k/sub 33//sup 2/ and Q). Ferroelectric properties of the PZT thin film make possible the tuning of the frequency resonance. Butterfly dependencies were both observed for series and parallel resonances.