Nonlinear mechanisms of filamentation in broad-area semiconductor lasers

There are three nonlinear mechanisms that can lead to filamentation in broad-area semiconductor lasers: gain-saturation-induced changes in the refractive index through the linewidth-enhancement factor, self-focusing due to heat-induced index changes, and self-defocusing through intensity-dependent index changes in the cladding layer. We present a theoretical model to analyze these mechanisms and their relative roles in destabilizing the laser output. We find that there exists a critical value for the linewidth-enhancement factor below which broad area lasers are stable for wide stripe widths (as wide as 250 /spl mu/m) and high pumping levels (as high as 20 times threshold). We also find that broad-area lasers are less susceptible to filamentation through self-defocusing and show how an intensity-dependent index in the cladding layer may be used to suppress filamentation caused by the linewidth-enhancement factor.

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