Contributions of D 0 and non-D 0 Gap States to the Kinetics of Light Induced Degradation of Amorphous Silicon under 1 sun Illumination

Light induced changes to 1 sun degraded steady state (DSS) have been investigated on hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells and corresponding films fabricated with and without hydrogen dilution of silane. Striking similarities are found for the degradation NLQHWLFV EHWZHHQ WKH HOHFWURQ PRELOLW\ OLIHWLPH SURGXFWV DQG WKH FRUUHVSRQGLQJ ILOO IDFWRUV (FF). These correlations that exist for both intrinsic materials at temperatures between 25 and 100U& DUH SUHVHQW IRU WKH '66 DV ZHOO DV LQ WKH NLQHWLFV ZKLFK H[KLELW GLVWLQFWO\ GLIIHUHQW GHSHQGHQFH RQ WHPSHUDWXUH 1R VXFK FRUUHODWLRQV DUH SUHVHQW EHWZHHQ )) DQG GHQVLties of D GHIHFWV PHDVXUHG ZLWK VXEJDS DEVRUSWLRQ ( DW H9 DQG HOHFWURQ VSLQ UHVRQDQFH (65 7KH creation of non-D defects is also clearly indicated by the temperature dependence of the kinetics DQG WKH FKDQJHV LQ WKH VKDSH RI ( ZLWK WKH UHVXOts suggesting the presence of more than one mechanism for the creation of light induced defects associated with the Staebler-Wronski effect (SWE).

[1]  Joshua M. Pearce,et al.  Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions , 2000 .

[2]  N. Hata,et al.  An improved analysis for band edge optical absorption spectra in hydrogenated amorphous silicon from optical and photoconductivity measurements , 1998 .

[3]  C. Wronski,et al.  Selfconsistent Analysis of Mobility-Lifetime Products and Subgap Absorption on Different PECVD A-SI:H Films , 1997 .

[4]  C. Wronski,et al.  Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films , 1997 .

[5]  C. Wronski,et al.  Initial, rapid light‐induced changes in hydrogenated amorphous silicon materials and solar cell structures: The effects of charged defects , 1996 .

[6]  L. Chen,et al.  ‘‘Fast’’ and ‘‘slow’’ metastable defects in hydrogenated amorphous silicon , 1993 .

[7]  B. Roedern.  Shortfall of defect models for amorphous silicon solar cell performance , 1993 .

[8]  Tsai,et al.  Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. , 1985, Physical review. B, Condensed matter.

[9]  H. Fritzsche,et al.  Study of light-induced creation of defects in a-Si:H by means of single and dual-beam photoconductivity , 1983 .

[10]  Joshua M. Pearce,et al.  Kinetics of Light Induced Changes in Protocrystalline Thin Film Materials and Solar Cells , 2000 .

[11]  C. Wronski.  The Light Induced Changes in A-Si: H Materials and Solar Cells—Where We are Now , 1997 .

[12]  H. Fritzsche,et al.  Photo-induced creation of metastable defects in a-Si: H at low temperatures and their effect on the photoconductivity , 1994 .

[13]  Subhendu Guha,et al.  Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen Dilution , 1994 .