论文信息 - Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si 1-x Ge x , Films Using Ultraclean LPCVD - 字舞流文

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si 1-x Ge x , Films Using Ultraclean LPCVD

M. Sakuraba | T. Matsuura | J. Murota | I. Kawashima | N. Yabumoto | A. Morrya

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