Automatic full quantum analysis of CV measurements for bulk and SOI devices
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G. Reimbold | Gerard Ghibaudo | A. Toffoli | F. Allain | Charles Leroux | A. Toffoli | G. Ghibaudo | F. Allain | G. Reimbold | C. Leroux | M. Charbonnier | M. Charbonnier
[1] G. Reimbold,et al. Tuning the dipole at the High-κ/SiO2 interface in advanced metal gate stacks , 2009 .
[2] D. Kwong,et al. Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes , 2008 .
[3] A. Toffoli,et al. Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks , 2007 .
[4] B. DeSalvo,et al. Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics , 2000 .
[5] J. Maserjian,et al. Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon , 1974 .