论文信息 - Optical lithography—present and future challenges

Optical lithography—present and future challenges

Abstract Optical lithography has been an industrial workhorse for many decades. It has reached a wavelength of 193 nm, a Numerical Aperture (NA) of 0.93 but was facing difficulties to advance further until the debut of immersion lithography. This review deals with the limit of dry and immersion lithography systems, their present and future challenges to reach these very limits. A discussion of defects in immersion lithography, the status of immersion lithography, polarized illumination, high-index materials, solid-immersion mask, double exposure and double patterning is included. To cite this article: B.J. Lin, C. R. Physique 7 (2006).

Burn Jeng Lin

[1] Mordechai Rothschild,et al. Resolution enhancement of 157 nm lithography by liquid immersion , 2002 .

[2] B. Lin. The k3 coefficient in non-paraxial (lambda)/NA scaling equations for resolution, depth of focus, and immersion lithography , 2002 .

[3] Yuuki Ishii,et al. Full-field exposure tools for immersion lithography , 2004, SPIE Advanced Lithography.

[4] Bert Koek,et al. Characterization of ArF immersion process for production (Invited Paper) , 2004, SPIE Advanced Lithography.

[5] B. Lin,et al. Immersion lithography and its impact on semiconductor manufacturing , 2004 .

[6] Burn Jeng Lin. Where Is The Lost Resolution? , 1986, Advanced Lithography.

[7] Burn-Jeng Lin. Depth of focus in multilayered media—a long-neglected phenomenon aroused by immersion lithography , 2004 .

[8] Bang-Chein Ho,et al. Double exposure for the contact layer of the 65-nm node , 2005, SPIE Advanced Lithography.

[9] M. Switkes,et al. Immersion lithography at 157 nm , 2001 .