An automatic system for broadband complex-admittance measurements on MOS structures
暂无分享,去创建一个
[1] A. Goetzberger,et al. Interface states in SiSiO2 interfaces , 1972 .
[2] E. H. Nicollian,et al. The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .
[3] C. N. Berglund. Surface states at steam-grown silicon-silicon dioxide interfaces , 1966 .
[4] J. Shewchun,et al. Automatic Plotting of Conductance and Capacitance of Metal‐Insulator‐Semiconductor Diodes or Any Two Terminal Complex Admittance , 1966 .
[5] P. V. Gray,et al. DENSITY OF SiO2–Si INTERFACE STATES , 1966 .
[6] L. Terman. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes , 1962 .