We discuss the influence of indium segregation-induced disorder effects in InxGa1-xN alloys. Changes of the transport mechanism between InN and InxGa1-xN with x=0.58 were demonstrated by means of temperature-dependent conductivity measurements. Furthermore, an increase of (i) full width at half maximum of photoluminescence (PL) and (ii) the Stokes shift between PL and absorption was seen for samples approaching an In content of 0.5, which can also be attributed to growing disorder. Hydrostatic pressure dependent PL measurements of In-rich InGaN alloys are diacussed. Due to the fact that PL in InGaN originates from regions with higher-than-average In content, the luminescence pressure coefficient dEE/dp should not be associated with the average In content, but with the In content which is in accordance with the energy of the photon emission. This correction leads to a reduction of the large bowing of dEE/dp (associated with the band gap) which was reported earlier. Furthermore, it is shown that the electron concentration in InN has a significant influence on the measured value of dEE/dp.