Doped (AlxGa1-x)0.5In0.5P alloys grown by MOCVD

Doped (AlxGa1-x)0.5In0.P alloys were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). It was demonstrated that the Zn-doped concentration in AlGaInP alloys was increased with the reducing of growth temperature and Al composition and the enhancing of dimethylzinc (DEZn) flow rate, also, the Si-doped concentration was reduced as the rising of growth temperature and silane (SiH4) flow rate.