Multi-bit electro-mechanical memory device and method manufacturing the same

The present invention discloses a multi-bit memory device and a method of manufacturing electromechanical capable of increasing or maximizing the degree of integration of the memory device. Processes for their preparation includes the steps of forming a bit line on a substrate in a first direction; Forming a first interlayer insulating film on the bit lines; Forming a second film to the lower word line and the first sacrificial direction on the first interlayer insulating film; Forming a spacer on the lower word lines and the first sacrificial film side wall; A step of removing the first interlayer insulating film is exposed by said spacers to form a contact hole, the bit line which is selectively exposed in the bit line thereon; Forming a pad electrode on the inside of the contact holes; Forming a cantilever electrode in the first direction at the top of the pad electrode; Forming a second sacrificial layer on the cantilever of the lower electrode the upper word line in the second direction, the trap site, and the upper word line; And comprises the steps of creating the first sacrificial film and the second sacrificial film is removed to a predetermined upper and lower portions of the cantilever electrode gap. Spacers (spacer), a word line, a cantilever (cantilever), a bit line (bit line), the trap site (trap site)