论文信息 - High Power V-Band Double Drift IMPATT Amplifier

High Power V-Band Double Drift IMPATT Amplifier

A 490 mW circulator-coupled IMPATT reflection amplifier with 6.9 dB gain at 59.25 GHz and 1.9 GHz bandwidth for 1 dB rolloff has been developed using double-drift IMPATT diodes on diamond in a novel circuit designed to minimize subharmonic instabilities.

D.L. English | K.P. Weller | E.M. Nakaji

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