Strain Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for Integration with Si
暂无分享，去创建一个
Germanium-on-silicon photodetectors with responsivities as high as 0.85 A/W at 1550 nm that exhibit dark currents of 100 mA/cm2 and external efficiency up to 68% are demonstrated. Strain in the Ge film was determined to be 0.16%, reducing the optical bandgap by ~12 meV, resulting in a ~20 nm red shift at the absorption edge
[1] Gianlorenzo Masini,et al. High performance germanium-on-silicon detectors for optical communications , 2002 .
[2] Yasuhiko Ishikawa,et al. Strain-induced band gap shrinkage in Ge grown on Si substrate , 2003 .
[3] Kazumi Wada,et al. Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates , 2000 .
[4] S. Luryi,et al. New infrared detector on a silicon chip , 1984, IEEE Transactions on Electron Devices.