Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.

[1]  Chenming Hu,et al.  Hot-electron-induced MOSFET degradation—Model, monitor, and improvement , 1985, IEEE Transactions on Electron Devices.

[2]  Jin-Woo Han,et al.  Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes , 2011, IEEE Electron Device Letters.

[3]  S. J. Lee,et al.  Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge , 2011, IEEE Electron Device Letters.

[4]  D. McCarthy,et al.  Lateral distribution of hot-carrier-induced interface traps in MOSFETs , 1988 .

[5]  Hyungsoon Shin,et al.  Hot-carrier-induced circuit degradation in actual DRAM , 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

[6]  Yi-Hsuan Hsiao,et al.  Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage , 2012, 2012 International Electron Devices Meeting.

[7]  S. Mahapatra,et al.  On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress , 2006, IEEE Transactions on Electron Devices.

[8]  P. Švec,et al.  Materials Science and Engineering A , 2012 .

[9]  Kartikeya Mayaram,et al.  Self-heating effects in basic semiconductor structures , 1993 .

[10]  Chenming Hu,et al.  Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement , 1985, IEEE Journal of Solid-State Circuits.

[11]  Chenming Hu,et al.  Effect of low and high temperature anneal on process-induced damage of gate oxide , 1994, IEEE Electron Device Letters.