A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS
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[1] Ali M. Niknejad,et al. A 60 GHz linear wideband power amplifier using cascode neutralization in 28 nm CMOS , 2013, Proceedings of the IEEE 2013 Custom Integrated Circuits Conference.
[2] Andrea Bevilacqua,et al. A 40–67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP , 2014, ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC).
[3] Eric Kerherve,et al. 2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.
[4] Patrick Reynaert,et al. 14.3 A Push-Pull mm-Wave power amplifier with <0.8° AM-PM distortion in 40nm CMOS , 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
[5] Patrick Reynaert,et al. A 60-GHz Dual-Mode Class AB Power Amplifier in 40-nm CMOS , 2013, IEEE Journal of Solid-State Circuits.
[6] Chorng-Kuang Wang,et al. A 1V 19.3dBm 79GHz power amplifier in 65nm CMOS , 2012, 2012 IEEE International Solid-State Circuits Conference.
[7] Rowan. Gilmore,et al. Practical RF Circuit Design for Modern Wireless Systems: Active Circuits and Systems, Vol. 2 , 2003 .
[8] P. M. Farahabadi,et al. A dual-mode highly efficient 60 GHz power amplifier in 65 nm CMOS , 2014, 2014 IEEE Radio Frequency Integrated Circuits Symposium.
[9] Andrea Bevilacqua,et al. A 40–67 GHz Power Amplifier With 13 dBm ${\rm P}_{\rm SAT}$ and 16% PAE in 28 nm CMOS LP , 2015, IEEE Journal of Solid-State Circuits.