Heteroepitaxy of CuIn x Se y : a review of the material and interface properties
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[1] A. Rockett,et al. Gallium diffusion and diffusivity in CuInSe2 epitaxial layers , 1996 .
[2] D. Schmid,et al. Photoemission studies on Cu(In, Ga)Se2 thin films and related binary selenides , 1996 .
[3] David J. Srolovitz,et al. Twinning in thin films—I. Elastic analysis , 1996 .
[4] H. Zogg,et al. Characterization of heteroepitaxial CuIn3Se5 and CuInSe2 layers on Si substrates , 1994 .
[5] H. Zogg,et al. Direct growth of heteroepitaxial CuInSe2 layers on Si substrates , 1994 .
[6] M. Yakushev,et al. Influence of proton implantation on the properties of CuInSe2 single crystals (I). Ion channeling study of lattice damage , 1994 .
[7] O. Igarashi. Epitaxial growth of CuInSe2 single crystal by halogen transport method , 1993 .
[8] A. Rockett,et al. A TEM study of the crystallography and defect structures of single crystal and polycrystalline copper indium diselenide , 1991 .
[9] A. Rockett,et al. Chemical and structural characterization of physical‐vapor deposited CuInSe2 for solar cell applications , 1990 .
[10] James W. Mayer,et al. Ion Beam Handbook for Material Analysis , 1978 .