Crystallinity Analysis of Amorphous-Crystalline Mixed Phase Silicon Films Using EXAFS Method

The crystalline phase fraction (Xc) of amorphous-crystalline mixed phase Si films prepared by thermal annealing of a-Si:H films and by plasma CVD and chemical annealing methods was investigated by an EXAFS method. The EXAFS spectra of these films were represented by linear-combination of a-Si:H and c-Si EXAFS spectra. The values of Xc were analyzed by least-square curve fitting. Furthermore, the Xc values analyzed by a conventional Raman method were calibrated by the EXAFS analysis results.