Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD

Abstract We studied the growth of InAs quantum dots on InP (0 0 1) substrates in a low-pressure metalorganic chemical vapor deposition by using a so-called InP ‘double-cap’ procedure. With double-capping, a photoluminescence spectrum is modified into a series of multiple peaks, where the emission peaks arise from several quantum dot families with different heights changing in a step of integer number of an InAs monolayer. Cross-sectional transmission electron micrograph observations revealed that the shape of double-capped dots is dramatically changed into a thin plate-like shape with extremely flat upper and lower interfaces, being consistent with our interpretation of the photoluminescence spectrum. We showed that the procedure was extremely useful for controlling the emission wavelength from quantum dots in an InAs/InP (0 0 1) system.

[1]  G. Patriarche,et al.  Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm , 2001 .

[2]  S. Salaun,et al.  Relationship between self‐organization and size of InAs islands on InP(001) grown by gas‐source molecular beam epitaxy , 1995 .

[3]  M. Ciorga,et al.  Families of islands in InAs/InP self-assembled quantum dots: a census obtained from magneto-photoluminescence , 2003 .

[4]  Benzhong Wang,et al.  Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate , 1998 .

[5]  S. Moisa,et al.  Using As/P exchange processes to modify InAs/InP quantum dots , 2003 .

[6]  O. Dehaese,et al.  Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission , 2002 .

[7]  A. Rudra,et al.  Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy , 1991 .

[8]  J. Lefebvre,et al.  Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots , 2001 .

[9]  Euijoon Yoon,et al.  Effects of As/P exchange reaction on the formation of InAs/InP quantum dots , 1999 .

[10]  P. Poole,et al.  Comment on “Thermal annealing effect on the intersublevel transitions in InAs quantum dots” [Appl. Phys. Lett. 78, 2196 (2001)] , 2002 .

[11]  M. Borgström,et al.  Effects of substrate doping and surface roughness on self-assembling InAs/InP quantum dots , 2000 .

[12]  P. Desjardins,et al.  METALORGANIC VAPOR PHASE EPITAXY OF COHERENT SELF-ASSEMBLED INAS NANOMETER-SIZED ISLANDS IN INP(001) , 1997 .

[13]  Lars Montelius,et al.  Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy , 1998 .