The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)
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[1] N. Amer,et al. Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kinetics , 1992 .
[2] J. Knall,et al. Growth of Ge on Si(100) and Si(113) studied by STM , 1992 .
[3] B. Müller,et al. Trench formation in surfactant mediated epitaxial film growth of Ge on Si(100) , 1992 .
[4] Tromp,et al. Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111). , 1991, Physical review. B, Condensed matter.
[5] H. Sirringhaus,et al. Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopy , 1991 .
[6] Reuter,et al. Defect self-annihilation in surfactant-mediated epitaxial growth. , 1991, Physical review letters.
[7] S. Higuchi,et al. The growth of Ge on a TeSi(001) surface: surface catalytic epitaxy , 1991 .
[8] Reuter,et al. Influence of surfactants in Ge and Si epitaxy on Si(001). , 1990, Physical review. B, Condensed matter.
[9] R. Tromp,et al. Microstructure and strain relief of Ge films grown layer by layer on Si(001). , 1990, Physical review. B, Condensed matter.
[10] Pandey,et al. Evidence for trimer reconstruction of Si(111) √3 × √3 -Sb: Scanning tunneling microscopy and first-principles theory , 1990 .
[11] J. Falta,et al. THE INITIAL STAGES OF GROWTH OF SILICON ON Si(111) BY SLOW POSITRON ANNIHILATION LOW-ENERGY ELECTRON DIFFRACTION , 1989 .
[12] Reuter,et al. Surfactants in epitaxial growth. , 1989, Physical review letters.
[13] M. Horn,et al. Low‐energy electron diffraction investigations of Si molecular‐beam epitaxy onto Si(100) , 1988 .
[14] Chong-Yun Park,et al. Low Energy Electron Diffraction and X-Ray Photoelectron Spectroscopy Studies of the Formation of Submonolayer Interfaces of Sb/Si(111) , 1988 .
[15] G. Meyer,et al. A new LEED instrument for quantitative spot profile analysis , 1986, 1501.07389.
[16] J. W. Matthews,et al. Defects in epitaxial multilayers: II. Dislocation pile-ups, threading dislocations, slip lines and cracks , 1975 .
[17] A. Cullis,et al. Transmission electron microscope observations of extended and unextended dislocation nodes in Si and Ge/Si layers using the weak‐beam technique , 1973 .