Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission
暂无分享,去创建一个
E. Monroy | Le Si Dang | E. Monroy | M. D. Hertog | L. S. Dang | R. Songmuang | C. Himwas | R. Songmuang | M. den Hertog | C. Himwas
[1] M. Albrecht,et al. Chemically ordered AlGaN alloys: Spontaneous formation of natural quantum dots , 2005 .
[2] T. Moustakas,et al. Long range order in AlxGa1−xN films grown by molecular beam epitaxy , 1997 .
[3] J. A. Tuchman,et al. Spontaneous compositional modulation in the AlGaN layers of a thick AlGaN/GaN multilayer structure , 2001 .
[4] H. Lüth,et al. Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy. , 2007, Nano letters.
[5] B. Daudin,et al. From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer , 2007 .
[6] Jerry R. Meyer,et al. Band parameters for III–V compound semiconductors and their alloys , 2001 .
[7] Jerry R. Meyer,et al. Band parameters for nitrogen-containing semiconductors , 2003 .
[8] E. Monroy,et al. Identification of III–N nanowire growth kinetics via a marker technique , 2010, Nanotechnology.
[9] M. Khan,et al. Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers , 2006 .
[10] T. Ben,et al. Imaging and Analysis by Transmission Electron Microscopy of the Spontaneous Formation of Al-Rich Shell Structure in AlxGa1-xN/GaN Nanowires , 2012 .
[11] Bruno Gayral,et al. Quantum-confined Stark effect in GaN/AlN quantum dots in nanowires , 2009 .
[12] H. Kuo,et al. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability , 2014, Scientific Reports.
[13] L. Kirste,et al. Pyramidal-plane ordering in AlGaN alloys , 2003 .
[14] Yasuhiko Arakawa,et al. A gallium nitride single-photon source operating at 200 K , 2006, Nature materials.
[15] E. Monroy,et al. Correlation of polarity and crystal structure with optoelectronic and transport properties of GaN/AlN/GaN nanowire sensors. , 2012, Nano letters.
[16] Yoichi Kawakami,et al. 100 mW deep-ultraviolet emission from aluminium-nitride-based quantum wells pumped by an electron beam , 2010 .
[17] Theodore D. Moustakas,et al. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy , 1998 .
[18] K. B. Nam,et al. Unique optical properties of AlGaN alloys and related ultraviolet emitters , 2004 .
[19] H. Renevier,et al. Growth, structural and optical properties of AlGaN nanowires in the whole composition range , 2013, Nanotechnology.
[20] E. Monroy,et al. Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots , 2012 .
[21] A. Andreev,et al. Strain distribution in GaN∕AlN quantum-dot superlattices , 2005 .
[22] Kai Cui,et al. High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy , 2012 .
[23] W. Schaff,et al. Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers , 2005 .