Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

In this study, we focus on the improved device characteristics of fully depleted silicon-on-insulator (FD-SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) on a Si(110) surface using normally off accumulation-mode device structures. It is demonstrated that the current drivability of an accumulation-mode FD-SOI n-MOSFET on Si(110) is about 1.5 times larger than that of a conventional inversion-mode FD-SOI n-MOSFET on a (110)-oriented surface. Furthermore, it is confirmed that the current drivability of an accumulation-mode FD-SOI p-MOSFET fabricated on Si(110) is also 3 times larger than that of a conventional FD-SOI pMOS formed on a Si(100) surface.