A Si bistable diode utilizing interband tunneling junctions

A forward S-type bistability was observed in a Si diode with two double δ-doped Si tunnel junctions between the p and n contacts. The conductivity in the two branches of the bistable I–V curve changes by seven orders of magnitude. This, coupled with the all-silicon nature of the device, makes it a very attractive multistate device for practical applications. The bistability is explained by a mechanism, referred to as “band switching,” which is supported by temperature dependence of the I–V characteristics.

[1]  K. Wang,et al.  A novel high speed, three element Si-based static random access memory (SRAM) cell , 1995, IEEE Electron Device Letters.

[2]  Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature , 1990, IEEE Electron Device Letters.

[3]  A. G. Chynoweth,et al.  Internal Field Emission in Silicon p-n Junctions , 1957 .

[4]  J. Laskar,et al.  Three-terminal delta-doped barrier switching device with S-shaped negative differential resistance , 1989 .

[5]  Kang L. Wang,et al.  Hole intersubband absorption in δ‐doped multiple Si layers , 1991 .

[6]  Kang L. Wang,et al.  GeSi/Si bistable diode exhibiting a large on/off conductance ratio , 1995 .

[7]  Y. Fang,et al.  A novel amorphous silicon doping superlattice device with double switching characteristics for multiple-valued logic applications , 1993, IEEE Electron Device Letters.

[8]  L. Esaki.  New Phenomenon in Narrow Germanium p-n Junctions , 1958 .

[9]  John E. Cunningham,et al.  Delta-doped ohmic contacts to n-GaAs , 1986 .

[10]  H. Radamson,et al.  Negative differential resistance at room temperature in δ ‐doped diodes grown by Si‐molecular beam epitaxy , 1994 .

[11]  L. Esaki,et al.  A bird's-eye view on the evolution of semiconductor superlattices and quantum wells , 1986 .

[12]  Y. H. Wang,et al.  Interband resonant tunneling diode in δ-doped GaAs , 1990 .

[13]  I. A. Lesk,et al.  Direct Observation of Phonons During Tunneling in Narrow Junction Diodes , 1959 .