Recent advances in submicron alignment 300 mm copper-copper thermocompressive face-to-face wafer-to-wafer bonding and integrated infrared, high-speed FIB metrology
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T. Matthias | M. Wimplinger | J. Burggraf | C. Senowitz | W.H. Teh | C. Deeb | R. Young | A. Buxbaum
[1] Eric Beyne,et al. 3D Stacked IC demonstrator using Hybrid Collective Die-to-Wafer bonding with copper Through Silicon Vias (TSV) , 2009, 2009 IEEE International Conference on 3D System Integration.
[2] R. Kumar,et al. 200-mm wafer-scale transfer of 0.18-/spl mu/m dual-damascene Cu/SiO/sub 2/ interconnection system to plastic substrates , 2005, IEEE Electron Device Letters.
[3] X. Gu,et al. A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding , 2008, 2008 IEEE International Electron Devices Meeting.
[4] S. Ramanathan,et al. Three-dimensional wafer stacking via Cu-Cu bonding integrated with 65-nm strained-Si/low-k CMOS technology , 2006, IEEE Electron Device Letters.
[5] Pierric Gueguen,et al. Copper direct bonding for 3D integration , 2008, 2008 International Interconnect Technology Conference.