A Review on Compact Modeling of Multiple-Gate MOSFETs

This paper reviews recent development on compact modeling of multiple-gate (MG) MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson and current continuity equations for symmetric double-gate (DG) and surrounding-gate (SG) MOSFETs have been developed first. Highly accurate explicit solutions are subsequently developed to deal with the implicit algebraic equations of the models. By adding quantum mechanical effects and short-channel effects, as well as capacitance formulations, the core model for DG MOSFETs has been expanded into a full-blown compact model which has been calibrated to and validated by experimental FinFET hardware. With regard to the various other types of MG MOSFETs developed, the core models for DG and SG MOSFETs have been generalized to the less symmetric structures, including quadruple-gate (QG), triple-gate (TG), ¿-gate, and ¿-gate MOSFETs. Other research activities on multiple-gate MOSFETs are briefly summarized at the end.

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