e Characteristics of Polysilicon xide Grown in Pure N2O
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This work reports on the characteristics of polysil- icon oxide grown in pure N20 (NzO-grown polyoxide). The obtained polyoxide has a desirable polarity asymmetry of J-E characteristic, i.e., a lower leakage current and a higher break- down electric field, which are ideal for the nonvolatile memory application, when the top electrode is positively biased. The asym- metry is due to the smoother surface of the N20-grown polyoxide. Comparing to conventional polyoxides, the Nz 0-grown polyoxide has a lower electron trapping rate and a larger Qbd, which are attributed to the incorporated nitrogen at the polyoxiddpoiy-1 interface. The centroids of trapped charges of the NzO-grown polyoxide are more away from the polyoxide/poly-1 interface and this affects the polarity dependence of trapping.
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