论文信息 - A high magnetic coupling, low loss, stacked balun in digital 65nm CMOS

A high magnetic coupling, low loss, stacked balun in digital 65nm CMOS

We present a high magnetic coupling, low loss, stacked balun using a thick aluminum bonding metal layer over a thick copper layer. The thick copper is used to realize a differential primary input winding that resides directly underneath a single ended spiral winding using the aluminum. The spiral forms the single ended secondary output of the balun and is rotated by 90° so as to prevent any metal shorting for its cross under. Occupying an area of 0.078mm2 on a digital 65nm process, a 5 turn primary with a 3 turn secondary has a measured coupling of 0.94 and a total balun loss of 1.55dB at 1845MHz.

Petteri Litmanen | Siraj Akhtar | Richard Taylor

[1] Li Li,et al. Design and characterization of an integrated passive balun for quad band GSM applications , 2006, 56th Electronic Components and Technology Conference 2006.

[2] H.Y.D. Yang,et al. Design and analysis of on-chip symmetric parallel-plate coupled-line balun for silicon RF integrated circuits , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[3] Kaixue Ma,et al. 800MHz∼2.5GHz miniaturized multi-layer symmetrical stacked baluns for silicon based RF ICs , 2005, IMS 2005.