ION BEAM-INDUCED LUMINESCENCE OF EU-IMPLANTED AL2O3 AND CAF2

Abstract A study has been made of the luminescence induced by Ar + - or He + -bombardment on Eu + -implanted Al 2 O 3 and CaF 2 . Eu + -ions of 100 keV were implanted into α-Al 2 O 3 and CaF 2 at fluences of 5 × 10 14 and 1 × 10 15 ions/cm 2 at room temperature. The luminescence spectra were measured during bombardment by 100 keV Ar + or 50 keV He + of samples implanted with Eu using a spectrophotometer with three optical filters and photomultiplier. The luminescence spectra emitted during He-bombardment of unimplanted Al 2 O 3 contains peaks at 340 and 420 nm. Luminescence due to color centers was also observed in CaF 2 . The luminescence spectra emitted from Eu-implanted Al 2 O 3 by Ar or He bombardment have peaks identified as emission due to the Eu 3+ state. The luminescence spectra are enhanced after annealing. The intensity of luminescence due to Eu 3+ states induced by He-bombardment is stronger than that by Ar-bombardment, although the energy loss due to ionization for He bombardment is lower than for Ar bombardment. In the case of Eu-implanted CaF 2 , there are peaks identified as emission due to both Eu 2+ and Eu 3+ states.