High carrier mobility in polycrystalline thin film diamond
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[1] R. Jackman,et al. Photoconductive properties of thin film diamond , 1997 .
[2] Takashi Sugino,et al. Electrical conduction in undoped diamond films prepared by chemical vapor deposition , 1991 .
[3] R. Glass,et al. Hall effect measurements on boron‐doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition , 1993 .
[4] Y. Yokota,et al. Characterization of Homoepitaxial Diamond Films Grown from Carbon Monoxide , 1993 .
[5] S. A. Grot,et al. Electrical properties of selectively grown homoepitaxial diamond films , 1991 .
[6] T. Potter,et al. Synthesis and electrical characterization of boron‐doped thin diamond films , 1992 .
[7] K. V. Ravi,et al. Resistivity of chemical vapor deposited diamond films , 1989 .
[8] G. Gildenblat,et al. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films , 1991, Proc. IEEE.
[9] Koji Kajimura,et al. Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements , 1996 .
[10] R. Jackman,et al. Interaction of hydrogen with chemical vapor deposition diamond surfaces: A thermal desorption study , 1994 .