Initial growth stage and optical properties of a three‐dimensional InAs structure on GaAs

A few mololayers of InAs is heteroepitaxially grown on GaAs substrate by molecular‐beam epitaxy. Structure and optical properties are investigated. Reflection high‐energy electron‐diffraction observation reveals that an InAs layer forms a three‐dimensional structure with specific facets after two‐dimensional growth. The transmission electron microscope observation shows that these structures have structural anisotropy in the growth plane. Photoluminescense spectroscopy shows that the luminescence from the InAs structures exhibits the polarization property caused by the quantum dot effect of the structural anisotropy.

[1]  Jean-Michel Gérard,et al.  In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As , 1992 .

[2]  Ryoichi Ito,et al.  Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells , 1992 .

[3]  D. W. Pashley,et al.  A transmission electron microscopy (TEM) study of a wedge-shaped InAs epitaxial layer on GaAs (001) grown by molecular beam epitaxy (MBE) , 1992 .

[4]  Krishnamurthy,et al.  Serpentine superlattice quantum-wire arrays of (Al,Ga)As grown on vicinal GaAs substrates. , 1992, Physical review letters.

[5]  J. Merz,et al.  Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique , 1992 .

[6]  Ploog,et al.  Semiconductor quantum-wire structures directly grown on high-index surfaces. , 1992, Physical review. B, Condensed matter.

[7]  Ray Murray,et al.  Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs , 1992 .

[8]  Yasuhiko Arakawa,et al.  Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal‐organic chemical‐vapor deposition , 1992 .

[9]  T. Narusawa,et al.  Initial stage of InAs on GaAs grown by molecular‐beam epitaxy studied with low‐energy ion scattering , 1991 .

[10]  Brandt,et al.  InAs quantum dots in a single-crystal GaAs matrix. , 1991, Physical review. B, Condensed matter.

[11]  Mitsuaki Yano,et al.  Structural stability of ultrathin InAs/GaAs quantum wells grown by migration enhanced epitaxy , 1991 .

[12]  O. Brandt,et al.  Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures , 1991 .

[13]  Initial growth stage of InAs/GaAs studied by RHEED-TRAXS method , 1991 .

[14]  H. Toyoshima,et al.  Growth by molecular‐beam epitaxy and characterization of (InAs)m(GaAs)m short period superlattices on InP substrates , 1990 .

[15]  S. Ando,et al.  Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires , 1989 .

[16]  S. Noda,et al.  Rheed and x-ray characterization of InGaAs/GaAs grown by MBE , 1989 .

[17]  Takashi Fukui,et al.  (AlAs)1/2(GaAs)1/2 fractional‐layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition , 1988 .

[18]  Randall S. Geels,et al.  Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates , 1988 .

[19]  C. Guille,et al.  First stages of the MBE growth of InAs on (001)GaAs , 1987 .

[20]  W. Wiegmann,et al.  Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy , 1984 .