Crystallographic orientation dependence of bulk optical rectification

Abstract We present a study on the use of bulk optical rectification (difference frequency mixing (DFM) for the generation of terahertz (THz) pulses. The emitted radiation field is calculated and measured at normal and off-normal incidence for a wide range of GaAs samples with different surface orientations. The dependence of the visible-to-THz conversion efficiency on the crystallographic orientation is determined.

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