论文信息 - Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs - 字舞流文

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

A. Braña | B. Beaumont | P. Gibart | M. Azize | E. Muñoz | Z. Bougrioua | P. Lorenzini | A. Jiménez