On the Way towards High-Efficiency Thin Film Silicon Solar Cells by the "Micromorph" Concept

Note: IMT-NE Number: 222 Reference PV-LAB-CONF-1996-008 Record created on 2009-02-10, modified on 2017-05-10

[1]  R. Schwarz,et al.  Carrier Transport Through Grain Boundaries in Hydrogenated Microcrystalline Silicon , 1992 .

[2]  M. J. Williams,et al.  Photoconductivity and optical stability of intrinsic μc-Si films formed by remote plasma-enhanced chemical-vapor deposition, remote pecvd , 1991 .

[3]  Reinhard Carius,et al.  Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge , 1994 .

[4]  G. Lucovsky,et al.  Structural interpretation of the vibrational spectra of a-Si: H alloys , 1979 .

[5]  A. Shah,et al.  Origins of atmospheric contamination in amorphous silicon prepared by very high frequency (70 MHz) glow discharge , 1995 .

[6]  M. Green,et al.  Optical properties of intrinsic silicon at 300 K , 1995 .

[7]  Y. Chabal,et al.  High resolution infrared study of hydrogen chemisorbed on Si(100) , 1983 .

[8]  A. Shah,et al.  Passivation properties of amorphous and microcrystalline silicon layers deposited by VHF-GD for crystalline silicon solar cells , 1994 .

[9]  Subhendu Guha,et al.  Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen Dilution , 1994 .

[10]  Arvind Shah,et al.  Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior? , 1994 .

[11]  J. Meier,et al.  Origin and Incorporation Mechanism for Oxygen Contaminants in a-Si:H and μc-Si:H Films Prepared by the Very High Frequency (70 MHz) Glow Discharge Technique , 1995 .

[12]  K. Ufert,et al.  7% stable efficiency large area a-Si: H solar modules by module design improvement , 1993 .

[13]  J. Meier,et al.  Electrical properties and degradation kinetics of compensated hydrogenated microcrystalline silicon deposited by very high‐frequency‐glow discharge , 1995 .

[14]  Jerome J. Cuomo,et al.  Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering , 1977 .

[15]  Arvind Shah,et al.  Influence of Doping on the Structural Properties of Micro-Crystalline Silicon Prepared with the VHF-GD Technique at Low Deposition Temperatures. , 1991 .

[16]  Y. L. He,et al.  Transient and steady-state optoelectronic properties of μc-Si:H , 1991 .

[17]  N. Wyrsch,et al.  High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency , 1987 .

[18]  S. Satoh,et al.  A High-Capacitance Trench Structure (Hi-CAT) for Megabit LSI Memories , 1985 .

[19]  J. Meier,et al.  Very High Frequency Glow Discharge: Plasma- and Deposition Aspects , 1995 .

[20]  Y. Chabal.  Hydrogen vibration on Si (111) 7×7: evidence for a unique chemisorption site , 1983 .

[21]  F. Demichelis,et al.  Structural and Electrical Properties of Undoped Microcrystalline Silicon grown by 70 MHz and 13.56 MHz PECVD , 1994 .

[22]  Arvind Shah,et al.  Compensation of the dangling-bond space charge in amorphous silicon solar cells by graded low-level doping in the intrinsic layer , 1994 .