0.5W X-band SiGe PA with integrated double-tuned transformers

Power amplifier (PA) for a next generation X band T/R-modules in active array antennas is realized using low cost, high yield and high integration 0.18μm SiGe-HBT Technology. A single stage class AB cascode PA using only high-speed HBTs and double tuned transformers at the input and output matching networks with excellent performances has been designed. The PA achieve peak output power of 27dBm and maximum 36 % power added efficiency (PAE). The core RF size is 0.85mm × 0.56mm without pads and low frequency decoupling capacitors exhibiting an output power density of 1.0 W/mm2. To our knowledge, those values are the highest in SiGe-HBT power amplifiers.

[1]  John D. Cressler,et al.  An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications , 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[2]  J.D. Cressler,et al.  A High-Gain, Two-Stage, X-Band SiGe Power Amplifier , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[3]  Mark Hauhe,et al.  SiGe System on a Chip for radar applications , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[4]  L.P.B. Katehi,et al.  An X-band high-power amplifier using SiGe/Si HBT and lumped passive components , 2001, IEEE Microwave and Wireless Components Letters.

[5]  H. Shigematsu,et al.  GaN single-chip transceiver frontend MMIC for X-band applications , 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

[6]  G.M. Rebeiz,et al.  A Low-Loss Double-Tuned Transformer , 2007, IEEE Microwave and Wireless Components Letters.