论文信息 - On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

In this work, the low-frequency noise of UTBOX SOI nMOSFETs developed for Floating Body RAM (FBRAM) applications is reported and compared with the corresponding retention time. A clear trend is shown, relating a high retention time with a low noise spectral density SId. The one decade higher spread in SId compared with retention time indicates that other types of traps are responsible for both parameters. From the fact that for the same noise magnitude a different retention time can be observed in UTBOX nMOSFETs with a different channel processing strongly suggests that besides traps in the silicon film and at the interface, additional factors like the lateral electric field determine hole generation in the Si body.

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