표면 효과에 의한 실리콘 나노와이어의 전기적 특성 변화

Semiconductor nanowires are widely recognized for its potentials in becoming build blocks for future nano electronics. Among many unique characteristics of nanowires, surface effects due to dangling bonds and defects play a dominant role in transport properties in cases where the behavior is even changed to show opposite characteristics. In this paper, we represent surface effects of small diameter doping controlled silicon nanowires. While heavily doped silicon nanowires show normal n-type behavior, lightly doped nanowires exhibit p-type characteristics due to surface interaction.