论文信息 - Integrated-mirror optical switch: resonant semiconductor layer integrated in a far-infrared coupled waveguide modulator

Integrated-mirror optical switch: resonant semiconductor layer integrated in a far-infrared coupled waveguide modulator

A waveguide modulator for far-infrared light, based on the plasma resonance properties of a high density, thin electron sheet in semiconductors, is proposed. Parallel-coupled (uncoupled) waveguides can be uncoupled (coupled) by the presence of the electron gas.

Gennady Shkerdin | Roger Vounckx | Johan H. Stiens | A. I. Voronko

[1] Gustaaf Borghs,et al. New modulator for far‐infrared light: Integrated mirror optical switch , 1991 .

[2] D. M. Szmyd,et al. Heavily doped GaAs:Se. II. Electron mobility , 1990 .

[3] Maarten Kuijk,et al. Optical plasma resonance in semiconductors: Novel concepts for modulating far‐infrared light , 1989 .

[4] D. M. Szmyd,et al. Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass , 1990 .

[5] M. Soma,et al. The carrier effects on the change of refractive index for n‐type GaAs at λ=1.06,1.3, and 1.55 μm , 1990 .