Analytical models of GaAs FET's
暂无分享,去创建一个
[1] Naoki Yokoyama,et al. Orientation effect of self‐aligned source/drain planar GaAs Schottky barrier field‐effect transistors , 1983 .
[2] G.W. Taylor,et al. A device model for an ion-implanted MESFET , 1979, IEEE Transactions on Electron Devices.
[3] M. Shur,et al. Ballistic transport in semiconductor at low temperatures for low-power high-speed logic , 1979, IEEE Transactions on Electron Devices.
[4] M.S. Shur. Analytical model of GaAs MESFET's , 1978, IEEE Transactions on Electron Devices.
[5] E. Constant,et al. Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's , 1980, IEEE Transactions on Electron Devices.
[6] K.D. Wise,et al. Transconductance compression in submicrometer GaAs MESFET's , 1983, IEEE Electron Device Letters.
[7] R.E. Williams,et al. Graded channel FET's: Improved linearity and noise figure , 1978, IEEE Transactions on Electron Devices.
[8] S. Asai,et al. Two-dimensional numerical analysis of stability criteria of GaAs FET's , 1976, IEEE Transactions on Electron Devices.
[9] W. Curtice. A MESFET Model for Use in the Design of GaAs Integrated Circuits , 1980 .
[10] P. L. Hower,et al. Current saturation and small-signal characteristics of GaAs field-effect transistors , 1973 .
[11] R.W.H. Engelmann,et al. Bias dependence of GaAs and InP MESFET parameters , 1977, IEEE Transactions on Electron Devices.
[12] E. Constant,et al. Modeling of a submicrometer gate field‐effect transistor including effects of nonstationary electron dynamics , 1980 .