Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling
暂无分享,去创建一个
Gerard Mourou | M. Y. Frankel | J. A. Valdmanis | John F. Whitaker | J. Whitaker | G. Mourou | M. Frankel | J. Valdmanis
[1] Fuad E. Doany,et al. Carrier Lifetime vs. Ion-Implantation Dose in Silicon on Sapphire , 1987, Topical Meeting on Picosecond Electronics and Optoelectronics.
[2] Donald E. Cooper,et al. Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor). , 1986 .
[3] R. Fork,et al. Design considerations for a femtosecond pulse laser balancing self phase modulation, group velocity dispersion, saturable absorption, and saturable gain , 1986 .
[4] Chi H. Lee,et al. Picosecond optics and microwave technology , 1990 .
[5] G. Gonzalez. Microwave Transistor Amplifiers: Analysis and Design , 1984 .
[6] D. Auston,et al. Impulse response of photoconductors in transmission lines , 1983 .
[7] J. Whitaker,et al. Experimental characterization of external electrooptic probes , 1991, IEEE Microwave and Guided Wave Letters.
[8] Harold R. Fetterman,et al. Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBT , 1990 .
[9] P. Smith,et al. Extremely high gain 0.15 mu m gate-length InAlAs/InGaAs/InP HEMTs , 1991 .
[10] J. A. Valdmanis,et al. 1 THz-bandwidth proper for high-speed devices and integrated circuits , 1987 .
[11] William R. Eisenstadt,et al. Optoelectronic measurements of picosecond electrical pulse propagation in coplanar waveguide transmission lines , 1989 .
[12] C. Rauscher. Optoelectronic approach to on-chip device and circuit characterization at microwave and millimeter-wave frequencies , 1991 .
[13] Subpicosecond pulse propagation on coplanar waveguides: experiment and simulation , 1991, IEEE Microwave and Guided Wave Letters.
[14] G. Mourou,et al. Terahertz attenuation and dispersion characteristics of coplanar transmission lines , 1991 .
[15] P. Chao,et al. A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHz , 1989, IEEE Electron Device Letters.